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| 2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 (Z) 1st. Edition Jan. 1999 Features * Excellent inter modulation characteristic * High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter Note: Marking is "ZS-". 2SC5545 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 50 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO hFE Cob fT PG NF Min 15 -- -- -- 80 -- 10 14 -- Typ -- -- -- -- 120 0.69 12.6 16 1.1 Max -- 1 1 10 160 1.1 -- -- 2.0 Unit V A mA A V pF GHz dB dB Test Conditions I C = 10A , IE = 0 VCB = 12V , IE = 0 VCE = 6V , RBE = Aa VEB = 1.5V , IC = 0 VCE = 3V , IC = 20mA VCB = 3V , IE = 0 f = 1MHz VCE = 3V , IC = 20mA VCE = 3V, IC = 20mA f = 900MHz VCE = 3V, IC = 5mA f = 900MHz 2 2SC5545 Main Characteristics Maximum Collector Dissipation Curve 200 Pc (mW) hFE 200 DC Current Transfer Ratio vs. Collector Current VCE = 3 V Collector Power Dissipation DC Current Transfer Ratio 50 100 150 Ta (C) 200 150 100 100 50 0 0 1 2 5 10 20 50 100 Ambient Temperature Collector Current IC (mA) (pF) 2.0 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1MHz 20 (GHz) Gain Bandwidth Product vs. Collector Current VCE = 3 V Cob 1.6 16 Collector Output Capacitance fT 1.2 Gain Bandwidth Product 12 8 0.8 0.4 4 0 0.1 0 1 2 5 10 20 50 100 0.2 0.5 1 2 5 VCB (V) 10 Collector to Base Voltage Collector Current IC (mA) 3 2SC5545 Power Gain vs. Collector Current 20 5 VCE = 3 V PG (dB) NF (dB) 16 4 f = 900MHz Noise Figure vs. Collector Current 12 3 Power Gain 8 Noise Figure 100 2 4 VCE = 3 V f = 900MHz 1 0 1 0 2 5 10 20 IC 50 (mA) 1 2 5 10 20 50 100 Collector Current Collector Current I C (mA) 20 (dB) S 21 Parameter vs. Collector Current VCE = 3 V 16 f = 1GHz |S 21| S 21 parameter 2 12 8 4 0 1 2 5 10 20 50 100 Collector Current I C (mA) 4 2SC5545 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 10 / div. 60 -150 -30 Condition : V CE = 3 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) Condition : V CE = 3 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.04 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 -3 Condition : V CE = 3 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) Condition : V CE = 3 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) 5 2SC5545 Sparameter (VCE = 3V, IC = 20mA, Zo = 50) S11 f (MHz) MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.567 0.539 0.528 0.525 0.518 0.526 0.526 0.528 0.532 0.535 0.536 0.549 0.546 0.547 0.552 0.562 0.561 0.563 0.573 0.577 ANG -60.8 -102.7 -128.1 -143.2 -153.6 -161.2 -167.9 -172.8 -178.3 178.2 174.2 170.6 167.6 165.4 162.4 159.4 157.3 154.8 152.5 150.0 S21 MAG 34.04 24.61 18.16 14.26 11.65 9.82 8.48 7.46 6.63 6.00 5.48 5.04 4.67 4.34 4.09 3.82 3.62 3.43 3.26 3.13 ANG 146.8 125.5 113.2 105.5 100.2 96.4 92.9 90.0 87.4 85.1 82.9 81.0 79.1 77.4 75.7 74.0 72.5 70.7 69.2 67.8 S12 MAG 0.0207 0.0329 0.0399 0.0447 0.0495 0.0545 0.0594 0.0639 0.0698 0.0741 0.0801 0.0851 0.0901 0.0961 0.102 0.106 0.113 0.118 0.124 0.130 ANG 67.3 54.3 50.6 50.3 51.6 53.3 54.8 56.1 57.7 58.7 59.5 60.6 60.9 61.5 62.1 62.3 62.5 62.9 62.3 63.0 S22 MAG 0.817 0.605 0.463 0.379 0.327 0.293 0.269 0.253 0.242 0.235 0.229 0.225 0.223 0.222 0.222 0.223 0.224 0.227 0.229 0.232 ANG -37.3 -63.5 -80.5 -92.4 -101.8 -109.6 -116.2 -121.9 -127.0 -131.2 -135.1 -139.1 -142.0 -144.7 -147.2 -149.7 -152.3 -154.3 -155.8 -157.6 6 2SC5545 Package Dimensions Unit: mm 2.8 - 0.1 + 0.3 0.65 - 0.3 + 0.1 1.9 0.95 0.95 0.4 - 0.05 + 0.1 + 0.1 0.4 - 0.05 0.16 - 0.06 + 0.1 3 2 + 0.2 2.8 - 0.6 4 0.4 - 0.05 0.95 1.8 + 0.1 1 0.6 - 0.05 0.85 + 0.1 0.3 + 0.2 1.1- 0.1 0.65- 0.3 + 0.1 1.5 0 - 0.1 Hitachi Code EIAJ JEDEC MPAK-4 SC-61AA -- 7 2SC5545 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 8 |
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